Comparative analysis of tight-binding models for transition metal dichalcogenides
Bert Jorissen, Lucian Covaci, Bart Partoens
SciPost Phys. Core 7, 004 (2024) · published 6 February 2024
- doi: 10.21468/SciPostPhysCore.7.1.004
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Abstract
We provide a comprehensive analysis of the prominent tight-binding (TB) models for transition metal dichalcogenides (TMDs) available in the literature. We inspect the construction of these TB models, discuss their parameterization used and conduct a thorough comparison of their effectiveness in capturing important electronic properties. Based on these insights, we propose a novel TB model for TMDs designed for enhanced computational efficiency. Utilizing $MoS_2$ as a representative case, we explain why specific models offer a more accurate description. Our primary aim is to assist researchers in choosing the most appropriate TB model for their calculations on TMDs.
Cited by 1
Authors / Affiliation: mappings to Contributors and Organizations
See all Organizations.- 1 Bert Jorissen,
- 1 Lucian Covaci,
- 1 Bart Partoens
- Fonds Wetenschappelijk Onderzoek (FWO) (through Organization: Fonds voor Wetenschappelijk Onderzoek - Vlaanderen / Research Foundation - Flanders [FWO])