Yang Zhang, Liang Fu
SciPost Phys. Core 6, 038 (2023) ·
published 22 May 2023
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The problem of doping Mott insulators is of fundamental importance and long-standing interest in the study of strongly correlated electron systems. The advent of semiconductor based moiré materials opens a new ground for simulating the Hubbard model on the triangular lattice and exploring its rich phase diagram as a function of doping and external magnetic field. Based on our recent identification of spin polaron quasiparticle in Mott insulator, in this work we predict the emergence of a pseudogap metal phase at small doping below half filling and an intermediate range of fields, which exhibits a single-particle gap and a doping-dependent magnetization plateau.
