SciPost Submission Page
Gate-defined Kondo lattices with valley-helical quantum dot arrays
by Antonio Lucas Rigotti Manesco
This is not the latest submitted version.
Submission summary
| Authors (as registered SciPost users): | Antonio L. R. Manesco |
| Submission information | |
|---|---|
| Preprint Link: | https://arxiv.org/abs/2408.07148v2 (pdf) |
| Code repository: | https://doi.org/10.5281/zenodo.14334637 |
| Data repository: | https://doi.org/10.5281/zenodo.14334637 |
| Date submitted: | Jan. 2, 2025, 1:23 p.m. |
| Submitted by: | Antonio L. R. Manesco |
| Submitted to: | SciPost Physics |
| Ontological classification | |
|---|---|
| Academic field: | Physics |
| Specialties: |
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| Approaches: | Theoretical, Computational, Phenomenological |
Abstract
Kondo physics and heavy-fermion behavior have been predicted and observed in moiré materials. The electric tunability of moiré materials allows an in-situ study of Kondo lattices' phase diagrams, which is not possible with their intermetallic counterparts. However, moiré platforms rely on twisting, which introduces twisting angle disorder and undesired buckling. Here we propose device layouts for one- and two-dimensional gate-defined superlattices in Bernal bilayer graphene where localized states couple to dispersive valley-helical modes. We show that, under electronic interactions, these superlattices are described by an electrically tunable Kondo-Heisenberg model.
Author indications on fulfilling journal expectations
- Provide a novel and synergetic link between different research areas.
- Open a new pathway in an existing or a new research direction, with clear potential for multi-pronged follow-up work
- Detail a groundbreaking theoretical/experimental/computational discovery
- Present a breakthrough on a previously-identified and long-standing research stumbling block
Current status:
Reports on this Submission
Report #3 by Anonymous (Referee 3) on 2025-3-23 (Invited Report)
- Cite as: Anonymous, Report on arXiv:2408.07148v2, delivered 2025-03-23, doi: 10.21468/SciPost.Report.10889
Strengths
1- The idea to design a electrically-tunable Kondo-Heisenberg model via gate-defined superlattices in Bernal bilayer graphene is original. 2- The proposed device layout is corroborated by atomistic tight-binding calculations.
Weaknesses
1- The derivation of the SU(4) Kondo lattice model and the Heisenberg exchange term is missing in the manuscript. 2- The discussions of the effective Hamiltonian and the Kondo lattice model are minimalistic. 3- Limits of the tunability of the emerging Kondo-Heisenberg model are not discussed. 4- Details of the atomistic simulations and the parametrization of the tight-binding model are not included in the manuscript.
Report
The proposed idea is original and the proposed device layout is analysed based on atomistic simulations for estimated or typical values for such an experimental setup. Details of these atomistic simulations as well as large part of the model’s parametrization are unfortunately not given in the manuscript or its supplemental, but can be looked up in the code files provided on a repository.
The discussion of the effective models is very minimalistic and their derivation even absent. In particular the validity of the low-energy model and the implications for the ‘electrical tunability’ for practical experimental setups is unclear and should be discussed.
The form of the presented work is overall good, even though typos and inconsistent notation in the equations need to be corrected.
Despite the necessary revisions, I think that the accepance criterion of opening a new pathway with clear potential for follow-up work is given. The author should, however, address the questions on the validity and realizability of the proposed model for realistic device layouts.
Requested changes
1- The discussion of the effective model (eqn. (1-4)) should be expanded. Also, indicating the individual terms of the Hamiltonian (eq (1)), i.e., decoupled helical states and dot levels, in Figures 2 or 3, e.g. via dashed lines, would ease the reading. 2- The perturbative expansions leading to the Kondo lattice (eq. (6)) and Heisenberg exchange term (eq. (7)) should be included in the main text or the appendix. It seems that the author has the channel-symmetric two-channel Kondo model in mind for the effective model (eq. (6)), but details of the derivation which could help to verify this are unfortunately absent. 3- The discussion of the effective Kondo-Heisenberg model should be expanded: In which parameter regime is the obtained effective low-energy model justified? Which constraints does this impose on the exploitable parameter regime of the proposed Kondo-Heisenberg model for realistic values of the tuning parameters (gate voltage, layout and size of patterned middle layers etc.)? 4- Typos and inconsistent notation, in particular in the equations, have to be removed, see eqns. (2,3,5).
Recommendation
Ask for minor revision
Report #2 by Anonymous (Referee 2) on 2025-3-13 (Invited Report)
- Cite as: Anonymous, Report on arXiv:2408.07148v2, delivered 2025-03-13, doi: 10.21468/SciPost.Report.10823
Strengths
The author proposes a novel approach to realizing electrically tunable Kondo lattices using gate-defined superlattices in Bernal bilayer graphene.
- In contrast to traditional Kondo lattices found in heavy fermion materials—which necessitate complex material synthesis to vary coupling strengths and fillings—this system offers the ability to electrostatically tune interactions, offering a good control over the phase diagram.
-The proposed system circumvents the fabrication challenges associated with moiré systems, such as twist-angle disorder and strain effects, making it more experimentally accessible.
Weaknesses
For example, the author notes "possible challenges on fabricating the multi-gated layout shown in Fig. 1(a)."
It seems unclear how experimentally feasible this setup is. This point is not discussed.
-The paper primarily proposes a model without providing detailed calculations using the Kwant package. Details are not included in the paper. Additionally, it does not discuss the influence of parameters such as electric field strength, the distance between the created quantum dots, and the expected interaction strength between different dot levels. I believe the Kondo lattice model will only emerge as a low-energy theory for specific combinations of these parameters.
Report
The proposed approach in this paper presents an innovative method for realizing tunable Kondo lattices using gate-defined superlattices in Bernal bilayer graphene. The paper builds on well-established concepts in condensed matter physics, and the theoretical framework mapping the system to a Kondo-Heisenberg model appears valid.
Requested changes
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There should be a discussion on how variations in electric field strength, the distance between dots (related to the structure of the gates), and the interaction strength U affect the parameters of the Kondo lattice model. Given the claim that the Kondo lattice parameters are electrically tunable, it is important to demonstrate how these parameters can be modified.
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There should be a discussion on how disorder will affect the arising effective Kondo lattice model.
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I would appreciate it if the author could provide further details on the methodologies and calculations.
Recommendation
Ask for minor revision
I thank the referee for highlighting how the proposal in the manuscript addresses issues faced by the experimental community in other Kondo lattice platforms.
The referee says that I do not discuss the experimental feasibility of the device. This is in fact true for a reason: while there are, in principle, no practical limitations on implementing a setup with multiple back gates, no experimental works have tried it yet. Discussing with experimentalists in the field, I could not spot a fundamental issue with the proposal, but there are no previous works to back it up. I hope the manuscript will encourage experimentalists to try similar setups and address the feasibility of multiple back-gate devices. Finally, following the suggestion from referee 1, I also added an Appendix on transport across a split-gate device that addresses my own comment on the possible challenges.
I address the minor revision suggestions listed by the referee below:
There should be a discussion on how variations in electric field strength, the distance between dots (related to the structure of the gates), and the interaction strength U affect the parameters of the Kondo lattice model. Given the claim that the Kondo lattice parameters are electrically tunable, it is important to demonstrate how these parameters can be modified.
We now provide an estimation of how the effective model parameters scale with the microscopic parameters based on the numerics. I believe this discussion provides a direct recipe for tuning the effective parameters.
There should be a discussion on how disorder will affect the arising effective Kondo lattice model.
As the referee pointed out, (short-range) disorder is detrimental to the valley-helical transport. However, a series of recent experiments have observed valley-dependent phenomena in gate-defined nanostructures. These existing works suggest that short-range scattering sources, which would cause large momentum transfer and break valley conservation, are negligible. It is therefore reasonable to assume that the only sources of scattering are due to the confining electrostatic potential. Due to screening effects, this potential varies on a scale much larger than the lattice constant, and therefore does not cause intervalley scattering. I mention the absence of intervalley scattering in experiments at the end of the second paragraph of Sec. 2.
I would appreciate it if the author could provide further details on the methodologies and calculations.
I indeed missed details on the tight-binding calculations performed in Kwant. The code used in this manuscript was heavily based on the simulations done in a previous work, which we now refer to in Appendix A. In this previous work, we also developed the scaling model for the electronic structure that we use in the manuscript. Hopefully, this additional reference and the added comments in the Appendix provide enough information. I will be happy to provide additional information if the referee still misses something specific.
Report #1 by Anonymous (Referee 1) on 2025-3-5 (Invited Report)
- Cite as: Anonymous, Report on arXiv:2408.07148v2, delivered 2025-03-05, doi: 10.21468/SciPost.Report.10773
Strengths
Under the right conditions (interdot tunneling coupling and large charging energy), the author makes the case that the low-energy physics can be seen as a lattice Kondo-Heisenberg system with tunable parameters via the gate potentials.
The manuscript presents one-body calculations that consider the electrostatics to demonstrate the feasibility of the double/stacked gate designs.
Weaknesses
Although a well-written (if economically) paper, there are a few minor points that could be improved:
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The author suggests that a single-layer split gate geometry might be easier to achieve experimentally. It would have been useful to at least see a simple comparison between the two designs in a 1D case, for example. Are the electrostatics able to produce a nearly-single channel coupling?
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The paper has a few typos: a. The energy scale in fig 2a and 2b is missing. One can estimate it from the narrative, but still. b. Eq. 2 has $\delta \rho$ as the first term. A rogue superscript? c. Eq. 3 has $\epsilon$ but the text below uses $\epsilon_m$. d. Typos/spelling throughout...
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It would be useful to cite the references the author has in mind in connection with the "Similar networks..." phrase.
Report
Requested changes
See list above
Recommendation
Publish (meets expectations and criteria for this Journal)
I thank the referee for recommending publication. I went over the text to fix the typos. Moreover, I added simulations of a split-gate geometry to the appendix. While this geometry probably cannot reproduce the Kondo physics because the larger size of the quantum dots likely suppresses the charging energy, we show that the setup still works as a valley filter. We also related our simulations to recent experiments.
Furthermore, I fixed the typos pointed out by the referee and added the missing references.

Author: Antonio Manesco on 2025-06-03 [id 5541]
(in reply to Report 3 on 2025-03-23)I thank the referee for appreciating the originality of the work. I address the minor revision suggestions listed by the referee below:
I expanded the discussion of the effective model. I also added the dashed lines in Fig. 3. It is impossible to do it in Figure 2 since this comes from a microscopic simulation where I cannot completely decouple the degrees of freedom.
I added references now where this derivation is done. The SU(4) Kondo model was fully derived for carbon nanotubes. Although there the dispersive states are not valley helical, the left and right movers are decoupled in a similar way to the valleys in the present manuscript. The Heisenberg model was recently derived in the context of gate-defined quantum dots. Also, a similar derivation on valley-helical channels coupled to localized states was previously done in twisted bilayer graphene and strained graphene superlattices. We also added these references.
We have now added a discussion on how the effective model parameters depend on the microscopic parameters. This should provide a route for tuning these parameters in experiments. While I believe these considerations are general, an actual estimation of parameter windows can only be correctly made with realistic electrostatic simulations and possibly additional experimental input. Therefore, I limited the discussion to the expected scaling. The Kondo-Heiseberg model is justified as long as $\Delta, \Gamma \ll V$, $\chi \gg a$ (or $1/K\chi \ll 1$), and intervalley scattering caused by disorder is negligible. I went over the text to ensure that these requirements are clear.
I went over the equations and fixed the typos.